2B649, 2sb649a silicon pnp epitaxial application low frequency power amplifier complementary pair with 2sd669/a outline 1 2 3 1. emitter 2. collector 3. base to-126 mod
2B649, 2sb649a 2 absolute maximum ratings (ta = 25 c) ratings item symbol 2sb649 2sb649a unit collector to base voltage v cbo C180 C180 v collector to emitter voltage v ceo C120 C160 v emitter to base voltage v ebo C5 C5 v collector current i c C1.5 C1.5 a collector peak current i c(peak) C3 C3 a collector power dissipation p c 11w p c * 1 20 20 w junction temperature tj 150 150 c storage temperature tstg C55 to +150 C55 to +150 c note: 1. value at t c = 25 c
2B649, 2sb649a 3 electrical characteristics (ta = 25 c) 2sb649 2sb649a item symbol min typ max min typ max unit test conditions collector to base breakdown voltage v (br)cbo C180 C180 v i c = C1 ma, i e = 0 collector to emitter breakdown voltage v (br)ceo C120 C160 v i c = C10 ma, r be = emitter to base breakdown voltage v (br)ebo C5C5v i e = C1 ma, i c = 0 collector cutoff current i cbo C10 C10 m av cb = C160 v, i e = 0 dc current transfer ratio h fe1 * 1 60 320 60 200 v ce = C5 v, i c = C150 ma h fe2 30 30 v ce = C5 v, i c = C500 ma* 2 collector to emitter saturation voltage v ce(sat) C1C1v i c = C500 ma, i b = C50 ma base to emitter voltage v be C1.5C1.5v v ce = C5 v, i c = C150 ma gain bandwidth product f t 140 140 mhz v ce = C5 v, i c = C150 ma collector output capacitance cob 2727pfv cb = C10 v, i e = 0, f = 1 mhz notes: 1. the 2sb649 and 2sb649a are grouped by h fe1 as follows. 2. pulse test bcd 2sb649 60 to 120 100 to 200 160 to 320 2sb649a 60 to 120 100 to 200
2B649, 2sb649a 4 maximum collector dissipation
curve 30 20 10 0 50 100 150 case temperature t c ( c) collector power dissipation p c (w) area of safe operation i cmax (?3.3 v, ?.5 a) (?0 v, ?.5 a) dc operation (t c = 25 c) (?20 v, ?.038 a) (?60 v, ?.02 a) 2sb649a 2sb649 ? ?.0 ?.3 ?.1 ?.03 ?.01 ? ? ?0 collector to emitter voltage v ce (v) ?0 ?00 ?00 collector current i c (a) t c = 25 c p c = 20 w typical output characteristics ?.0 ?.8 ?.6 ?.4 ?.2 0 ?0 ?0 ?0 i b = 0 ?.5 ma ?.0 ?.5 ?.0 ?.5 ?.0 ?.5 ?.0 ?.5 ?.0 ?.5 ?0 ?0 collector to emitter voltage v ce (v) collector current i c (a) typical transfer characteristics ?00 ?00 collector current i c (ma) ?0 ? 0 ?.4 base to emitter voltage v be (v) ?.8 ?.2 ?.6 ?.0 v ce = ? v ta = 75 c 25 ?5
2B649, 2sb649a 5 dc current transfer ratio
vs. collector current 350 v ce = ?v ta = 75 c 25 c ?5 c 350 250 200 150 dc current transfer ratio h fe 100 50 0 ? ?0 ?00 ?,000 collector current i c (ma) collector to emitter saturation
voltage vs. collector current i c = 10 i b ?.2 ?.0 ?.8 ?.6 ?.4 ?.2 ? ? ?0 collector current i c (ma) ?00 ?5 25 ?,000 collector to emitter saturation voltage
v ce(sat) (v) ta = 75 c collector current i c (ma) i c = 10 i b ?.2 ?.0 ?.8 ?.6 ?.4 ?.2 ? ? ?0 ?00 ?,000 base to emitter saturation voltage
v be(sat) (v) base to emitter saturation voltage
vs. collector current ta = ?5 c 25 75 v ce = ? v gain bandwidth product
vs. collector current 240 200 160 120 80 40 0 ?0 ?0 gain bandwidth product f t (mhz) ?00 ?00 ?,000 collector current i c (ma)
2B649, 2sb649a 6 collector output capacitance vs.
collector to base voltage f = 1 mhz
i e = 0 200 100 50 20 10 5 2 ? ? ?0 ?0 ?00 collector to base voltage v cb (v) collector output capacitance c ob (pf)
2B649, 2sb649a 7 notice when using this document, keep the following in mind: 1. this document may, wholly or partially, be subject to change without notice. 2. all rights are reserved: no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without hitachis permission. 3. hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the users unit according to this document. 4. circuitry and other examples described herein are meant merely to indicate the characteristics and performance of hitachis semiconductor products. hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. no license is granted by implication or otherwise under any patents or other rights of any third party or hitachi, ltd. 6. medical applications: hitachis products are not authorized for use in medical applications without the written consent of the appropriate officer of hitachis sales company. such use includes, but is not limited to, use in life support systems. buyers of hitachis products are requested to notify the relevant hitachi sales offices when planning to use the products in medical applications.
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